半導体レ-ザの製造方法
文献类型：专利
| 作者 | 尺田 幸男; 田中 治夫; 虫上 雅人; 楠 薫; 井川 克彦; 石田 祐士 |
| 发表日期 | 1994-02-02 |
| 专利号 | JP1994009274B2 |
| 著作权人 | ROHM CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザの製造方法 |
| 英文摘要 | PURPOSE:To reduce a gap between an active layer and a current blocking region by forming the current blocking region by means of ion implantation of impurities or the like on the intermediate stage before forming an upper clad layer and a cap layer having fixed thicknesses. CONSTITUTION:A lower clad layer 2 of an n-type AlGaAs, an AlGaAs active layer 3, a p-type AlGaAs upper part first clad layer 4, an n-type AlGaAs upper part second clad layer 5 and a GaAs protective layer 6 are by turns epitaxially grown on an n-type GaAs substrate Next, ions are implanted or diffused from the surface to form a stripe 5a and a current blocking region 5b, which are of an isoconductive type to the first clad layer 4, on the upper second clad layer 5. Further, a third clad layer 8 and a cap layer 9 are by turns formed on the second clad layer 5. In this way, thickness of the stripe 5a can be formed with high dimension accuracy so as to be able to reduce a gap (t) between the active layer 3 and the current blocking layer 5b. |
| 公开日期 | 1994-02-02 |
| 申请日期 | 1987-03-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83789]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO LTD |
| 推荐引用方式 GB/T 7714 | 尺田 幸男,田中 治夫,虫上 雅人,等. 半導体レ-ザの製造方法. JP1994009274B2. 1994-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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