Semiconductor laser
文献类型：专利
| 作者 | SHINOHARA YASUO |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989218085A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent occurrence of each unskillful p-n junction which is formed at a base of double channel parts and avoid leakage of an electric current, by making an n-type buffer layer grow thinly before forming a p-n-p current block layer in the process of a liquid phase epitaxy. CONSTITUTION:A multilayer structure consisting of an n-type buffer layer 2, an active layer 3, and a p-type clad layer 4 is formed by a liquid phase combined growth process on an n-type InP substrate Then, two parallel grooves 5 (double channels) are formed in the multilayer by a photoresist process. After that, a p-n-p current block layer 6 as well as a cap layer 7 where the double channels are embedded grows by the second liquid phase epitaxy. In such a case, the current block layer 6 grows and its growth permits the n-type buffer layer 8 to grow thinly at the base of the double channels 5 before forming each p-n junction at the base of the channels 5. Thus, a semiconductor laser which is superior in characteristics is formed in such a way that no current leaks very much. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83791]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SHINOHARA YASUO. Semiconductor laser. JP1989218085A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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