Semiconductor laser element
文献类型：专利
| 作者 | TANAKA TOSHIAKI; MINAGAWA SHIGEKAZU |
| 发表日期 | 1992-02-07 |
| 专利号 | JP1992037081A |
| 著作权人 | 日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enable the high output operation to be performed in low threshold value current by a method wherein a luminescence active layer is structured of multiquantum well layer laminated of a quantum well layer and a quantum barrier layer or a single quantum well vertically provided with photowaveguide layers. CONSTITUTION:An n-GaAs buffer layer 2, an AlGaInP photo waveguide layer 3, a multiquantum well active layer 4 laminated of a GaIn quantum layer and an undoped quantum barrier layer, an AlGaInP photo waveguide layer 5 and a buffer layer 6 are successively grown on an n-GaAs substrate 1 tilted from a face (001) by exceeding 10 deg. in the orientations [110], (-1-10) direction. In such a constitution, the title semiconductor laser element can be polarized in high TE mode while the TE upsilon intensity is much higher than the TE mode intensity. Through these procedures, the TE mode can be gained selectively to facilitate the laser oscillation thereby enabling the threshold current to be lowered. |
| 公开日期 | 1992-02-07 |
| 申请日期 | 1990-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83793]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日立製作所 |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,MINAGAWA SHIGEKAZU. Semiconductor laser element. JP1992037081A. 1992-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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