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文献类型：专利
| 作者 | OOSHIMA MASAAKI; MATSUKI MICHIO |
| 发表日期 | 1991-01-08 |
| 专利号 | JP1991000797B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a laser at a low threshold value by forming the shape of an active layer constituting the semiconductor laser to a crescent shape, giving the distribution of a refractive index, which can be approximated by a secondary function, and arranging an InGaAsP layer having a refractive index, which is larger than that of InP and smaller than that of the active layer, on both sides of the active layer. CONSTITUTION:An N type InGaAsP layer 8 having a composition, a wavelength thereof corresponds to 3mum, a P type InP layer 9, an N type InP layer 10, a P type InP layer 11 and an N type InGaAsP layer 12 having a composition, a wavelength thereof corresponds to 0mum, are laminated on an N type InP substrate 18 and grown in an epitaxial manner. A SiO2 film 13 having a stripe is formed on the layer 12, and a groove is bored until the surface of the etched layer 8 is exposed. An N type InP layer 14 is grown in the groove so that the surface is formed to a crescent shape, the upper section of the layer 14 is coated with an InGaAsP active layer 15 having a composition, a wavelength thereof corresponds to 3mum, and a P type InP layer 16 and a P type InGaAsP layer 17 having a composition, a wavelength thereof corresponds to 05mum, are laminated and grown on the whole surface. |
| 公开日期 | 1991-01-08 |
| 申请日期 | 1983-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83795]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OOSHIMA MASAAKI,MATSUKI MICHIO. -. JP1991000797B2. 1991-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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