Semiconductor lasers
文献类型：专利
| 作者 | RYO HATTORI |
| 发表日期 | 1992-02-26 |
| 专利号 | GB2247347A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor lasers |
| 英文摘要 | The semiconductor laser includes a P-type semiconductor substrate 1, an N-type InP current blocking layer 2 on the substrate, a P-type InP buried layer 4 of which has the same thickness as and is surrounded by the first current blocking layer, and a ridge, on the buried layer, having a double heterojunction structure therein and including a stack of a flat P-type first InP cladding layer 5, a flat InGaAsP active layer 6, and a flat N-type second InP cladding layer 7. The ridge has a width of the same order as that of the buried layer. A P-type InP current blocking layer 9 is disposed on the N-type current blocking layer to bury the ridge therein, and an N-type contact layer 10 is formed over and in contact with the P-type current blocking layer and the N-type cladding layer. The conductivity types of the layers can be reversed. A distributed feedback laser is also described. |
| 公开日期 | 1992-02-26 |
| 申请日期 | 1990-12-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83796]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | RYO HATTORI. Semiconductor lasers. GB2247347A. 1992-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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