半導体レーザ
文献类型：专利
| 作者 | 五明 明子 |
| 发表日期 | 1999-04-09 |
| 专利号 | JP2910251B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To enable an AlGaInP and an AlGaInPAs semiconductor laser to be enhanced in current constriction efficiency inside a stripe. CONSTITUTION:A stripe-like protrusion a few to tens of mum in width is provided to the 001 plane of a GaAs substrate 1 extending in a direction, and a slope 2 as the side face of the protrusion makes an angle of 4 deg. or above with the 001 plane. A double hetero-structure composed of an N-type AlGaInP clad layer 3, a GaInP active layer 4, and a P-type AlGaInP clad layer 5 is made to grow on the GaAs substrate 1 through an organic metal vapor growth method. A ordered layer is formed in the active layer 4 inside the stripe protrusion, but a disordered region 8 is formed inside the active layer on the step 2. Attendant on this phenomenon, the band gap energy of the active layer 4 becomes higher in the stripe-like protrusion than in the disordered region. In result, an AlGaInP and an AlGaInPAs semiconductor laser can be lessened in oscillation threshold current density. |
| 公开日期 | 1999-06-23 |
| 申请日期 | 1990-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83800]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 五明 明子. 半導体レーザ. JP2910251B2. 1999-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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