Surface emitting type semiconductor laser
文献类型：专利
| 作者 | IGA KENICHI; IBARAKI AKIRA; FURUSAWA KOTARO; ISHIKAWA TORU |
| 发表日期 | 1991-08-01 |
| 专利号 | JP1991177087A |
| 著作权人 | 科学技術振興事業団 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting type semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to improve the efficiency of current injection to an activity area and hence reduce leakage current and minimize threshold current by installing an insulation film between a buried section and a semiconductor multi-layer film which serves as a reflecting mirror. CONSTITUTION:After an n-clad layer 2, a p-activity layer 3, a p-clad layer, a p-cap layer 5, and a mask layer are grown continuously on a substrate 1, these layers are etched in specified shape respectively to form a section to be buried. This mask layer is masked and a p-block layer 6 is adapted to grow around the section to be buried, thereby forming a buried section. Then, after the mask layer is removed by etching, an SiO2 film is deposited on the buried section and a section above the buried section based on an electron beam vapor deposition process. Then, the SiO2 film in the upper part of the buried section is removed and an insulation film 7 is patterned. After it is patterned, a further attempt is made to grow a p-buffer layer 8, a p-semiconductor multilayer film reflecting mirror 9, and a p-contact layer 10 thereon continuously. |
| 公开日期 | 1991-08-01 |
| 申请日期 | 1989-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83801]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 科学技術振興事業団 |
| 推荐引用方式 GB/T 7714 | IGA KENICHI,IBARAKI AKIRA,FURUSAWA KOTARO,et al. Surface emitting type semiconductor laser. JP1991177087A. 1991-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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