Semiconductor laser device
文献类型：专利
| 作者 | OHKUBO, MICHIO; IJICHI, TETSURO; IKEGAMI, YOSHIKAZU |
| 发表日期 | 1998-04-08 |
| 专利号 | EP0834971A1 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | In a semiconductor laser device comprising a semiconductor laser main body having an active layer formed between a pair of cladding layers, and a non-absorbing layer of InGaP formed on the facets of the semiconductor laser main body and having a band gap greater than the band gap of the active layer, a diffusion blocking layer of, for example, Si, SiN or Ge is formed on the surface of the non-absorbing layer, and a di-electric protective layer of, for example, AlOx, SiOx, SiNx or MgOx for regulating reflectance at the facets and protecting the non-absorbing layer is formed on the diffusion blocking layer. |
| 公开日期 | 1998-04-08 |
| 申请日期 | 1997-10-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83804]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | OHKUBO, MICHIO,IJICHI, TETSURO,IKEGAMI, YOSHIKAZU. Semiconductor laser device. EP0834971A1. 1998-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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