Semiconductor light-emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI |
| 发表日期 | 1989-07-27 |
| 专利号 | JP1989187993A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having low threshold currents, high efficiency and excellent high-frequency characteristics and a superior far-field pattern by using the laminated structure of a clad layer and a high resistance layer grown on a substrate and forming an active layer in a V-shaped trench formed in the laminated structure in a manner that the two edges of the active layer are brought into contact with the substrate. CONSTITUTION:A semiconductor light-emitting device has a high resistance layer 12 epitaxial-grown onto one conductivity type substrate 11, a V-shaped trench 13 being oriented in one direction parallel with the interface of the high resistance layer 12 and the substrate 11, being shaped so as to penetrate the high resistance layer 12 and having a bottom positioned in the substrate 11, a first clad layer 14 formed into the trench 13 in the substrate 11, an active layer 15 having two edges parallel with the direction of orientation of the trench 13 and being shaped onto the first clad layer 14 so that the two edges are brought into contact with the substrate 11, and a second clad layer 16 formed onto the active layer 15 so as to bury space on the active layer 15 in the trench 13. The high-resistance InP layer 12, the trench 13, the P-InP clad layer 14, the InGaAsP active layer 15 and the N-InP clad layer 16, etc., are formed onto the P-InP substrate 1 |
| 公开日期 | 1989-07-27 |
| 申请日期 | 1988-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83805]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI. Semiconductor light-emitting device. JP1989187993A. 1989-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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