Semiconductor laser element and its driving method
文献类型：专利
| 作者 | IKEDA SOTOMITSU |
| 发表日期 | 1992-08-28 |
| 专利号 | JP1992240791A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and its driving method |
| 英文摘要 | PURPOSE:To simultaneously oscillate and selectively oscillate many wavelength whose tunable width is large and which are dynamically stable by a method wherein a plurality of diffraction gratings which selectively reflect light at wavelengths corresponding to individual band gaps of a plurality of light- emitting layers and whose cycle is different are installed inside the same optical waveguide. CONSTITUTION:An n-AlxcGal-xcAs clad layer 3, an optical-waveguide structure part 4 and an optical-waveguide layer 10 are formed on an n-GaAs substrate 1; after that, two kinds of diffraction gratings 11, 12 are formed by two interference exposure methods and two etching operations. When a lambda/4 shift is formed in the cyclic structure of the individual diffraction gratings at this time, a more stable longitudinal-mode oscillation is obtained. Then, a p-AlxcGal-xcAs clad layer 5 and a p-GaAs cap layer 6 are formed; after that, a semiconductor laser is worked and electrodes 7 are formed. An electric current is injected independently into individual regions [I], [II]; a laser beam having a plurality of wavelengths whose wavelength is different in steps of about 50nm is output from a single radiant edge. |
| 公开日期 | 1992-08-28 |
| 申请日期 | 1991-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83806]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | IKEDA SOTOMITSU. Semiconductor laser element and its driving method. JP1992240791A. 1992-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。