Manufacture of semiconductor laser element
文献类型：专利
| 作者 | ISHIZUMI TAKASHI |
| 发表日期 | 1992-02-20 |
| 专利号 | JP1992053288A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To improve a semiconductor laser element in characteristics by a method wherein a second clad layer is formed before an oxide film is re-formed on the surface of a clad layer. CONSTITUTION:An active layer 303, a first clad layer 302, and a current constriction layer 305 are successively formed on the surface of a semiconductor substrate 301, and a part of the current constriction layer is removed through chemical etching to provide a stripe-like groove which extends from the surface of the current construction layer 305 to the surface of the first clad layer 302. Then, the substrate 301 is placed in a pre-vacuum chamber of a vapor phase epitaxial growth device, the surface of the substrate 301 is irradiated with an ion beam taking advantage of ion gas provided inside the pre-vacuum chamber, whereby an oxide film formed on the surface of the first clad layer 302 in the stripe-like groove at chemical etching is removed, while the pre-vacuum chamber is evacuated so as to transfer the substrate 301 into a high-vacuum reaction chamber. Furthermore, the substrate 301 is transferred into the reaction chamber, and a second clad layer 306 is formed on the surface of the substrate where the oxide film 310 is removed through a vapor phase epitaxial growth method. |
| 公开日期 | 1992-02-20 |
| 申请日期 | 1990-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83810]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | ISHIZUMI TAKASHI. Manufacture of semiconductor laser element. JP1992053288A. 1992-02-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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