Semiconductor laser device and its manufacture
文献类型：专利
| 作者 | YURI MASAAKI; OTA KAZUNARI |
| 发表日期 | 1992-09-25 |
| 专利号 | JP1992269884A |
| 著作权人 | MATSUSHITA ELECTRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its manufacture |
| 英文摘要 | PURPOSE:To relax the confinement of light in the transverse direction while the spread of carriers in the transverse direction is being suppressed and to realize a low threshold value and a low noise simultaneously by a method wherein, at a ridge waveguide-type semiconductor laser devide, a part which is close to a current constriction layer at a clad layer on the side of a ridge is set to a low carrier concentration. CONSTITUTION:The carrier concentration of a p-AlGaAs layer 6 is made smaller than the carrier concentration of a p-Al0.5Ga0.5As clad layer 4. Thereby, while the spread of carriers in the transverse direction is being suppressed, an n-GaAs current constriction layer 7 can be made distant from an active region. As a result, the confinement of light in the transverse direction is relaxed, and it is possible to manufacture a semiconductor laser which is resistant to a returned-light noise without increasing a threshold current. |
| 公开日期 | 1992-09-25 |
| 申请日期 | 1991-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83817]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRON CORP |
| 推荐引用方式 GB/T 7714 | YURI MASAAKI,OTA KAZUNARI. Semiconductor laser device and its manufacture. JP1992269884A. 1992-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。