Semiconductor laser device
文献类型：专利
| 作者 | NAITO YUMI |
| 发表日期 | 1996-04-25 |
| 专利号 | CA2203117A1 |
| 著作权人 | MITSUI CHEMICALS, INCORPORATED |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | The present invention is directed to a semiconductorlaser device comprising, as shown in Fig. 1, on a bufferlayer 32 of n-GaAs, a clad layer 31, a wave guide layer 30and a carrier block layer 29 of n-AlGaAs, a side barrierlayer 28 of non-doped AlGaAs, an active layer 27 which isformed by two non-doped GaAs quantum well layers and abarrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 anda clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs inthis order. Inside the wave guide layer 23, current narrowinglayers 24 having a lower refractive index and higher A1-composition than that of the wave guide layer are formed tosandwich a stripe-shaped active region 34. This creates arefractive index difference between the active region 34 andburied regions 33 in which each of the current narrowinglayers 24 exists, thereby forming a refractive index guidestructure. Thus, it is possible to obtain a high-outputsemiconductor laser device of the refractive index guidedtype which is easy to manufacture. |
| 公开日期 | 1996-04-25 |
| 申请日期 | 1995-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83818]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUI CHEMICALS, INCORPORATED |
| 推荐引用方式 GB/T 7714 | NAITO YUMI. Semiconductor laser device. CA2203117A1. 1996-04-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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