Semiconductor light emitting element
文献类型：专利
| 作者 | KONDO MASAHIKO; MINAGAWA SHIGEKAZU; SATO MAKOTO; UCHIDA KENJI; NAKATSUKA SHINICHI |
| 发表日期 | 1988-10-03 |
| 专利号 | JP1988236385A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To improve an InGaAlP/GaAs series semiconductor light emitting element in performance by a method wherein Ga1-xAlxAs, which can be used with a substrate common to InGaAlP/GaAs series, is used independently or in combination with In0.5(Ga1-xAlx) 0.5P. CONSTITUTION:An n-GaAs buffer layer 2, an n-AlAs first clad layer 3, an n-In0.5(Ga0.55Al0.44)0.5P second clad layer 4, a non-doped In0.48Ga0.52P active layer 5, a p-In0.5(Ga0.56Al0.44)0.5P second clad layer 6, a p-AlAs second layer 7, and a p-GaAs gap layer 8 are successively laminated on an n-GaAs substrate 1, and electrodes 9 and 10 are formed on the surface and the rear thereof. By these processes, carriers and light rays can be trapped in the active layer between the second clad layers 4 and 6, and between the first clad layers 3 and 7 respectively, wherefore a visible semiconductor laser with a high output can be obtained. |
| 公开日期 | 1988-10-03 |
| 申请日期 | 1987-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83820]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASAHIKO,MINAGAWA SHIGEKAZU,SATO MAKOTO,et al. Semiconductor light emitting element. JP1988236385A. 1988-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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