Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | UKO KATSUYUKI; MATSUSHIMA YUICHI; SAKAI KAZUO |
| 发表日期 | 1989-10-04 |
| 专利号 | JP1989248585A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To avoid the degradation of the yield, crystal defects and the like and improve the reliability by a method wherein the layer thickness of an active layer in which a light is generated or a waveguide layer provided closely to the active layer is periodically varied without being exposed to the air. CONSTITUTION:A first diffraction lattice 28 which has a periodical triangular uneveness is provided on an InP substrate 21 and an AlInAs buffer layer 22 is built up on it so as to have a relatively large thickness in order to reduce the influence of defects from the substrate 2 Therefore, the surface shape of the buffer layer 22 which reflects the diffraction lattice 28 on the substrate 21 is obtained. As the buffer layer 22 is built up on both the side slants of the respective valley parts (recesses) of the diffraction lattices simultaneously to the directions vertical to the slants, the surface of the buffer layer 22 is somewhat flat. Therefore, if an AlCaInAs active layer 23 is further built up on the buffer layer 22, its layer thickness is periodically varied by the reflection of the diffraction lattice 28 on the substrate 2 Further, a p-type AlInAs cladding layer 24 and a p-type CaInAs cap layer 25 are built up. With this constitution, the AlCaInAs active layer 23 can be kept apart from the diffraction lattice 28 which tends to cause crystal defects so that a DFB laser which has few crystal defects and the high reliability can be obtained. |
| 公开日期 | 1989-10-04 |
| 申请日期 | 1988-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83823]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | UKO KATSUYUKI,MATSUSHIMA YUICHI,SAKAI KAZUO. Distributed feedback type semiconductor laser. JP1989248585A. 1989-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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