Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser
文献类型：专利
| 作者 | FUJII TOSHIO; SANDOUUADARUSHIYU |
| 发表日期 | 1990-06-05 |
| 专利号 | JP1990146788A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a stripe type semiconductor laser without taking it out from a crystal growth device by finishing different kinds of crystal orientation while making different conductive type epitaxial crystal layers to grow simultaneously keeping a pressure ratio of the structural atoms at prescribed value. CONSTITUTION:A mask layer 42 of silicon oxide or the like is formed on a GaAs substrate 40. The mask layer 42 in the region expected for is removed. Next, when etching is performed on the surface of the GaAs substrate 40 exposed by an etching liquid for finishing (311), the central part becomes (100) face, the periphery becomes (311) A face or a (311) B face. Later, the mask layer 42 is removed. On the GaAs layer 40 which has finished these (100) face and the (311) A face. GaAs layers are piled up by a gas source molecular beam epitaxial method while adding Si as dopant. At that time, when As pressure shows a prescribed value, for instance, 7X10Torr, an n-type GaAs layer is formed on the (100) face, while a p-type GaAs layer is formed on the (311) A face. |
| 公开日期 | 1990-06-05 |
| 申请日期 | 1988-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83827]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | FUJII TOSHIO,SANDOUUADARUSHIYU. Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser. JP1990146788A. 1990-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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