中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser

文献类型:专利

作者FUJII TOSHIO; SANDOUUADARUSHIYU
发表日期1990-06-05
专利号JP1990146788A
著作权人富士通株式会社
国家日本
文献子类发明申请
其他题名Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser
英文摘要PURPOSE:To manufacture a stripe type semiconductor laser without taking it out from a crystal growth device by finishing different kinds of crystal orientation while making different conductive type epitaxial crystal layers to grow simultaneously keeping a pressure ratio of the structural atoms at prescribed value. CONSTITUTION:A mask layer 42 of silicon oxide or the like is formed on a GaAs substrate 40. The mask layer 42 in the region expected for is removed. Next, when etching is performed on the surface of the GaAs substrate 40 exposed by an etching liquid for finishing (311), the central part becomes (100) face, the periphery becomes (311) A face or a (311) B face. Later, the mask layer 42 is removed. On the GaAs layer 40 which has finished these (100) face and the (311) A face. GaAs layers are piled up by a gas source molecular beam epitaxial method while adding Si as dopant. At that time, when As pressure shows a prescribed value, for instance, 7X10Torr, an n-type GaAs layer is formed on the (100) face, while a p-type GaAs layer is formed on the (311) A face.
公开日期1990-06-05
申请日期1988-11-28
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/83827]  
专题半导体激光器专利数据库
作者单位富士通株式会社
推荐引用方式
GB/T 7714
FUJII TOSHIO,SANDOUUADARUSHIYU. Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser. JP1990146788A. 1990-06-05.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。