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文献类型：专利
| 作者 | MUSHIGAMI MASAHITO; TANAKA HARUO; SAKYAMA HAJIME |
| 发表日期 | 1993-10-08 |
| 专利号 | JP1993072116B2 |
| 著作权人 | ROHM KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To avoid a reduction in the characteristics of a semiconductor laser by a method wherein a dopant is diffused from a second upper clad layer into a first upper clad layer and the carrier concentration in the interface part between these layers is made high to reduce a series resistance in an annealing process and at the same time, a second evaporation preventive layer is formed before the annealing process to stop the evaporation of other layers. CONSTITUTION:An N-type AlxGa1-xAs (x=0.6) lower clad layer 3, an AlxGa1-xAs (x=0.15) active layer 4, a P-type AlxGa1-xAs (X=0.6) first upper clad layer 5, an N-type GaAs photo absorption layer 6 and an N-type AlxGa1-xAs (x=0.15) evaporation preventive layer 7 are laminated on an N-type GaAs substrate 2. Then, a striped groove 9 to intrude into the layer 6 is bored, an As molecular beam is irradiated on the substrate 2 to evaporate an impurity being adhered on the substrate surface and at the same time, to evaporate part of the layer 6 and the layer 5 is exposed on the base part of the groove 9. After that, a P AlyGa1-yAs second upper clad layer 10 is laminated on the upper part of the layer 5 including this groove 9 while the carrier concentration in the layer 10 is made higher by one order magnitude than that in the layer 5, but at this time, a second evaporation preventive layer 13 is provided to stop the evaporation of other regions. |
| 公开日期 | 1993-10-08 |
| 申请日期 | 1989-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83831]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM KK |
| 推荐引用方式 GB/T 7714 | MUSHIGAMI MASAHITO,TANAKA HARUO,SAKYAMA HAJIME. -. JP1993072116B2. 1993-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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