Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | IMANAKA KOUICHI; HORIKAWA HIDEAKI; SANO KAZUYA; WATANABE AKIRA |
| 发表日期 | 1986-01-16 |
| 专利号 | JP1986008985A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To control a lower clad layer and an active layer to be thin, to flatten the active layer and to make it possible to perform high output operation, by growing the active layer and both clad layers on the flat surface of a substrate before the formation of a groove shape. CONSTITUTION:On the flat surface of an n-GaAs substrate 1, an n-AlxGa1-xAs lower clad layer 2, an AlyGa1-yAs active layer 3, a p-AlzGa1-zAs upper clad layer 4, a GaAs light absorbing layer 5, an n-AlwGa1-wAs current constrictive layer 6 and a GaAs surface protecting layer 7 are sequentially grown by liquid- phase epitaxial growing. Then, by chemical or dry etching, a groove reaching the light absorbing layer 5 from the surface of the surface protecting layer 7 is machined and a groove 8 is obtained. Then the wafer with the groove is set in a growing furnace, and the second liquid-phase epitaxial growing is performed. The groove 8 is further deepened to the upper clad layer 4, and a groove 9 is formed. By this melt-etching, the surface of the upper clad layer 4 corresponding to the bottom of the groove 9 is exposed in the reacting furnace. The surface of the current constrictive layer 6 is also exposed. |
| 公开日期 | 1986-01-16 |
| 申请日期 | 1984-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83833]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI,HORIKAWA HIDEAKI,SANO KAZUYA,et al. Manufacture of semiconductor light emitting element. JP1986008985A. 1986-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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