High power semiconductor laser diode
文献类型：专利
| 作者 | SCHMIDT, BERTHOLD; PAWLIK, SUSANNE; THIES, ACHIM; HARDER, CHRISTOPH |
| 发表日期 | 2004-08-24 |
| 专利号 | US6782024 |
| 著作权人 | II-VI LASER ENTERPRISE GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High power semiconductor laser diode |
| 英文摘要 | Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two "unpumped end sections" of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6). |
| 公开日期 | 2004-08-24 |
| 申请日期 | 2001-05-10 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83834]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | II-VI LASER ENTERPRISE GMBH |
| 推荐引用方式 GB/T 7714 | SCHMIDT, BERTHOLD,PAWLIK, SUSANNE,THIES, ACHIM,et al. High power semiconductor laser diode. US6782024. 2004-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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