Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | WAKAO KIYOHIDE; TAKAGI NOBUYUKI |
| 发表日期 | 1984-04-07 |
| 专利号 | JP1984061087A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent the characteristic deterioration of a semiconductor light emitting device by a method wherein active layer and the clad layer between the first and second regions of the first conductivity type are defined as the second conductivity type regions. CONSTITUTION:An N type Ga0.7Al0.5As layer 2, a P type Ga0.5Al0.5As layer 3, and an N type GaAs layer 4 are successively grown on an N type GaAs substrate A groove is formed by selectively removing the surface of the N type GaAs substrate A recess is formed by selectively etching only the P type Ga0.5Al0.5 As layer 3. The clad layer 5 composed of an N type Ga0.6Al0.4As and the active layer 6 composed of an N type Ga0.9Al0.1As is formed. The Clad layer 7 composed of an N type Ga0.6Al0.4As is formed. An SiO2 film 11 is formed, and an aperture 12 is provided. Zinc is diffused into the bottom of the active layer 6 with the SiO2 film 11 as a mask. |
| 公开日期 | 1984-04-07 |
| 申请日期 | 1982-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83842]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE,TAKAGI NOBUYUKI. Semiconductor light emitting device and manufacture thereof. JP1984061087A. 1984-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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