半導体レ-ザアレイ装置
文献类型：专利
| 作者 | 粂 雅博; 伊藤 国雄 |
| 发表日期 | 1995-12-20 |
| 专利号 | JP1995120834B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザアレイ装置 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser characterized by high output power and excellent beam coherence, by aligning a plurality of light guides in parallel, optically combining the light guides, and providing a dielectric plate, which has the thickness different from that of a neighboring light emitting part by 1/2 wavelength in optical distance, in close contact with each laser light emitting part of the end surface of resonator. CONSTITUTION:A plurality of light guides are aligned in parallel and optically combined. A dielectric plate 9, which has the thickness different from a neighboring light emitting part by 1/2 wavelength in optical distance, is provided in close contact with each laser light emitting part on at least one side of the end surface of a resonator. For example, currents are injected through three stripe grooves 3 through a current narrowing layer on a P-type GaAs substrate, and laser oscillation occurs. The laser light beams on the stripes are laterally combined and oscillated as the same wavelength as a whole. The phase correcting plate 9 is placed in the close proximity with the end surface. The thickness d2 of a part of the plate 9 corresponding to the central stripe is made thinner than the thickness d1 at parts on both sides by the optical thickness of 1/2 wavelength. |
| 公开日期 | 1995-12-20 |
| 申请日期 | 1986-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83843]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | 粂 雅博,伊藤 国雄. 半導体レ-ザアレイ装置. JP1995120834B2. 1995-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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