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文献类型：专利
| 作者 | KOBAYASHI KEISUKE; NAKAJIMA HISAO; WATANABE NOZOMI; YAMASHITA MASATO; FUKUZAWA TADASHI |
| 发表日期 | 1988-09-21 |
| 专利号 | JP1988047355B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce the lateral spread of an injected current in an active layer, by providing a pair of multicrystal layers, with a stripe part left at positions adjacent to the active layer in one clad layer of the clad layers holding the active layer inbetween. CONSTITUTION:Clad layers 4 and 6 are constituted by compound semiconductors having a refractive index which is larger than the refractive index of an active layer 5 and provided on the upper and lower surfaces of the active layer 5. An SiO2 film 3 is formed on the layer 4, with a stripe part 3' remained. Thereafter, a compound semiconductor, which is the same as the layer 4, is grown on the layer 4. Then, a single crystal layer 9 is formed in the part 3' and the upper part thereof. On the film 3, a pair of multicrystal layers 2 are formed on both sides of the layer 9. The layers 2 and the layer 9 act as a clad layer. Therefore the layer 4 can be made thin. The layers 2 can be formed at the positions, which are closer to the layer 5 by the amount of the thickness reduction. When an exciting current is injected, the current is confined in a stripe shape by the layers 2 and injected into the layer 5 under this state. The spread of the injected current in the layer 5 becomes small, and gain increasing wave guidance is effectively generated. |
| 公开日期 | 1988-09-21 |
| 申请日期 | 1982-09-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83851]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | KOBAYASHI KEISUKE,NAKAJIMA HISAO,WATANABE NOZOMI,et al. -. JP1988047355B2. 1988-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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