Semiconductor light emitting device
文献类型：专利
| 作者 | HIRONAKA MISAO; YAGI TETSUYA; TAKAMIYA SABURO |
| 发表日期 | 1987-08-31 |
| 专利号 | JP1987196890A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To control an optical signal even if a signal in a substrate is very weak by controlling a large current applied to a light emitting diode by a weak signal current given to the base current of an integrated transistor. CONSTITUTION:A light emitting diode 20 such as a laser diode has a substrate 1, a current block layer 2, a lower clad layer 3, an active layer 4 and an upper clad layer 5. A transistor 30 has either one of a collector and an emitter commonly with the layer 5 of the diode 20, and has the other as a cap layer 6 and a base region 10 as a base. As a result, when a forward voltage of the diode 20 is applied to between the electrodes 8 and 9 and suitable control current is applied from an electrode 11, the forward voltage can be applied to the diode 20, and oscillation becomes possible. In this case, the transistor 30 amplifies the control current to control a large current flowing through the diode 20. |
| 公开日期 | 1987-08-31 |
| 申请日期 | 1986-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83852]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIRONAKA MISAO,YAGI TETSUYA,TAKAMIYA SABURO. Semiconductor light emitting device. JP1987196890A. 1987-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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