Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; OKAZAKI JIROU |
| 发表日期 | 1985-10-21 |
| 专利号 | JP1985208825A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To produce a stable uniaxial mode laser diode with good reproducibility, by preventing grooves provided in a substrate from being deformed by heat treatment for dissolving melt before liquid-phase growth. CONSTITUTION:A carbon container 31 having a multiplicity of small holes in the bottom is inserted into the leftmost aperture in an upper plate 22. The container 31 contains tin, and indium.phosphorus and indium.arsenic each of an amount saturable at a soaking temperature for dissolving growing melt 24, 25 and 26. A substrate 1 provided with grooves is placed in a recess of a lower plate 21 with the grooves disposed on the upper side to be opposed to the leftmost aperture in the upper plate 22, and the growing melt is dissolved. The substrate 1 is supplied with vapor from the tin solvent melt through the small holes of the container 31 and subjected to large arsenic pressure and phosphorus pressure so that the grooves are not deformed. The upper plate 22 is then slid such that the melt 24 for growing a guide layer, the melt 25 for growing an active layer and the melt 26 for growing a clad layer are superposed serially in that order over the substrate 1 for performing liquid-phase epitaxial growth in each step for forming a guide layer, an active layer and a clad layer. |
| 公开日期 | 1985-10-21 |
| 申请日期 | 1984-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83855]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,OKAZAKI JIROU. Manufacture of semiconductor light emitting device. JP1985208825A. 1985-10-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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