Semiconductor light emitting device
文献类型：专利
| 作者 | NOGUCHI HIDEAKI |
| 发表日期 | 1991-08-06 |
| 专利号 | JP1991180089A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To suppress the increase of dark lines by a method wherein elements such as In are introduced as impurities into an AlxGa1-xAs layer of an active layer. CONSTITUTION:A semiconductor substrate 1 made of n-type GaAs, a first cladding layer 2 made of n-type Alx1Ga1-x1As, an active layer 3 made of Alx2 Ga1-x2As, a second cladding layer 4 made of p-type Alx3Ga1-x3As, a cap layer 5 made of p-type Alx4Ga1-x4As and a buried layer 6 made of Alx5Ga1-x5As for current constriction are provided. Thus, by introducing one or more types of impurities selected among In, Sb, B and N into the semiconductor layers including at least the active layer made of AlxGa1-xAs, local stress fields are formed near the impurities. With this constitution, dislocations and crystal defects are fixed, so that the increase of dark lines of non-light emitting recombination centers caused by the movements of the dislocations and the crystal defects can be suppressed. |
| 公开日期 | 1991-08-06 |
| 申请日期 | 1989-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83860]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NOGUCHI HIDEAKI. Semiconductor light emitting device. JP1991180089A. 1991-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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