Semiconductor laser device
文献类型：专利
| 作者 | FUNABASHI, MASAKI; YATSU, RYOSUKE; KASUKAWA, AKIHIKO |
| 发表日期 | 2002-03-14 |
| 专利号 | US20020031152A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A DFB Laser of buried hetero type with a lasing wavelength of 1550 nm, having on an InP substrate a laminated structure of an InP buffer layer, an active layer, a 200-nm-thickness InP spacer layer, a 240-nm-period diffraction grating made of a 20-nm-thickness GaInAsP layer, and an InP first cladding layer in which diffraction grating is buried. The peak wavelength lambdmax of the optical gain distribution of the active layer is approximately 1530 nm. The bandgap wavelength of the diffraction grating is approximately 1510 nm. The laminated structure is etched into mesa stripes, on both sides of which are formed p/n-separated current blocking regions, Since the diffraction grating is formed of GaInAsP having lambdg of approximately 1510 nm, little absorption occurs at wavelengths around the lasing wavelength 1550 nm. The absorption is coefficient with respect to the peak wavelength of the optical gain distribution of the active layer is greater than the absorption coefficient with respect to the lasing wavelength. |
| 公开日期 | 2002-03-14 |
| 申请日期 | 2001-02-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83862]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | FUNABASHI, MASAKI,YATSU, RYOSUKE,KASUKAWA, AKIHIKO. Semiconductor laser device. US20020031152A1. 2002-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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