Semiconductor laser device
文献类型：专利
| 作者 | KAMITE KIYOTSUGU |
| 发表日期 | 1985-01-31 |
| 专利号 | JP1985018990A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To perform a stabilized oscillation with a high refractive index by a method wherein the form of an active layer is formed in a recessed state in such a way that the central part thereof becomes thinner than external members and the spreading of a P-N junction face between the active layer and a clad layer is made nearly equal. CONSTITUTION:A clad layer 12 and an active layer 13 of a large thickness are grown on a substrate 11 by a liquid-phase epitaxial method. Then, a slit-shaped diffusion mask 17 is formed, an etching is performed in such a way that the thickness of the active layer 13 becomes 0.55-4mum and the mask 17 is removed. Subsequently, a clad layer 14, a blocking layer 15 and a contact layer 16 are grown. Then, diffusion masks 18 are formed and a diffusion layer of a P type impurity concentration is formed up to 5mum in thickness. After that, a press-in diffusion is performed at 900 deg.C and a P-N junction face 19 is formed. The diffusion masks 18 are removed, and positive electrodes 20 are formed on the layer 16, while a negative electrode 21 is formed on the lower surface of the substrate 1 |
| 公开日期 | 1985-01-31 |
| 申请日期 | 1983-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83863]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | KAMITE KIYOTSUGU. Semiconductor laser device. JP1985018990A. 1985-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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