Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | TANAKA KAZUHIRO; WAKAO KIYOHIDE; ISHIKAWA HIROSHI; YAMAGOSHI SHIGENOBU; KOMENO JUNJI |
| 发表日期 | 1986-09-26 |
| 专利号 | JP1986216495A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a high performance semiconductor laser of low threshold current and to effectively amount on a heat sink by forming grooves having 10mum or less of surface width at both sides of the light emitting region of the laser, and flatly burying the groove with high resistance layers formed selectively by a vapor phase growing method such as a chloride vapor phase growing method, thereby suppressing a leakage current. CONSTITUTION:An N-type InP buffer layer 2, an InGaAsP active layer 3, a P-type InP clad layer 4 and P type InGaAsP contact layer 5 are sequentially grown on an N-type InP substrate An SiO2 film 6 is accumulated, patterned to allow and SiO2 film of the width (W2) to remain on the light emitting region, and a hole of width (W2) is formed. Then, with the film 6 as a mask a semiconductor crystal is etched to dig grooves 7. In this case, the size of the width W1 of the groove is 10mum or less. Then, an InP high resistance layer is grown by chloride VPE to form a flat high resistance buried layer. Buried layers 8 formed at both sides of the active layer have 10cm or higher to suppress the leakage current, thereby improving the characteristic such as threshold current. |
| 公开日期 | 1986-09-26 |
| 申请日期 | 1985-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83865]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TANAKA KAZUHIRO,WAKAO KIYOHIDE,ISHIKAWA HIROSHI,et al. Semiconductor light emitting device and manufacture thereof. JP1986216495A. 1986-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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