Semiconductor laser
文献类型：专利
| 作者 | IKUTA AKIHISA; ISHIGURO NAGATAKA |
| 发表日期 | 1990-02-05 |
| 专利号 | JP1990033993A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the differential efficiency from reducing and enhance the output by providing a variety of concentrations of an impurity in clad layers and making high concentration of the impurity in the clad layer within the specific thickness formed just on the boundary surface of an active layer. CONSTITUTION:An N-type clad layer 2, an active layer 3, a high-concentration P-type clad layer 8, a P-type clad layer 4, and a layer 5 are epitaxially grown on an N-type InP substrate to make doublehetero structure, and current narrowing structure to efficiently implant a current into the active layer with block layers 6 and 7 is made. Increasing the energy barrier of the active layer 3 and the P-type clad layer with the high-concentration area 8 on the boundary surface of the active layer 3, and making the concentration of an impurity in the other area 4 low, decreasing the absorption loss of a beam exuding from the active layer to prevent the differential efficiency from reducing and enhance the output. |
| 公开日期 | 1990-02-05 |
| 申请日期 | 1988-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83866]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | IKUTA AKIHISA,ISHIGURO NAGATAKA. Semiconductor laser. JP1990033993A. 1990-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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