Semiconductor integrated light source
文献类型：专利
| 作者 | KIYOKU KATSUAKI; NOGUCHI ETSUO; OKAMOTO MINORU; MIKAMI OSAMU |
| 发表日期 | 1992-08-12 |
| 专利号 | JP1992221873A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor integrated light source |
| 英文摘要 | PURPOSE:To improve the yield of manufacturing an array element having a plurality of semiconductor lasers including uniform wavelength intervals by inclining the linear regions of stripelike waveguides of lasers with respect to the forming direction of a diffraction grating, and forming them nonparallel to each other. CONSTITUTION:A diffraction grating pattern is written on a p-type InGaAsP optical guide layer 4, and formed in an uneven state by etching to form the periods of diffraction gratings on the entire surface of a substrate in the same direction such as in a direction . Then, a p-type InP clad layer 5 and a p-type InGaAsP electrode layer 6 are continuously grown. Thereafter, a thin SiO2 film is formed on the entire surface, and thin films are formed in a plurality of stripes along a direction by photoetching. Here, angles formed between the stripes (a)-(d) corresponding to lasers La, Lb, Lc, Ld and a plane are respectively set to about 3.57, 2.91, 2.06, 0.0 deg. With the thin films as masks it is etched until it reaches the substrate 1 to form a laminate of an inverted mesa shape. |
| 公开日期 | 1992-08-12 |
| 申请日期 | 1990-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83867]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KIYOKU KATSUAKI,NOGUCHI ETSUO,OKAMOTO MINORU,et al. Semiconductor integrated light source. JP1992221873A. 1992-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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