半導体レ-ザ
文献类型：专利
| 作者 | 萬濃 正也; 小倉 基次 |
| 发表日期 | 1995-02-22 |
| 专利号 | JP1995016080B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To easily obtain a single-mode AlGaInP system semiconductor laser by forming closely to a clad layer an AlxGa1-xAs layer whose bandgap is larger and whose refractive index is smaller than an activated layer. CONSTITUTION:A recessed groove 2 is formed by the normal photolithography and chemical etching processes. The recessed groove is 1mum deep and 5mum wide. An n-type Al0.75Ga0.25As layer 3 is grown on an n-type GaAs substrate 1 by the MOVPE method to obtain a flat surface even on the recessed groove. The surface is 3mum thick on the recessed groove 3. Then an n-type (Al0.4 Ga0.6)0.5In0.5P-clad layer 4 being 0.1mum thick, a non-doped Ga0.5In0.5P layer 5 being 0.1mum thick, a P-type (Al0.4Ga0.6)0.5In0.5P-clad layer 6 being 0.8mum thick, and an n-type GaAs capped layer 7 being 5mum thick are grown sequentially. Then a current constriction is made after forming a Zn diffusion layer, and electrodes 8 and 9 for both n-side and p-side are formed. The Al0.75Ga0.25As layer does not absorb light, because it has a bandgap larger than that of the Ga0.5In0.5P layer and a small refractive index, whereby it serves as a layer in which to enclose light. |
| 公开日期 | 1995-02-22 |
| 申请日期 | 1987-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83875]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 萬濃 正也,小倉 基次. 半導体レ-ザ. JP1995016080B2. 1995-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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