Manufacture of semiconductor laser
文献类型：专利
| 作者 | NISHIKAWA YUKIE; TSUBURAI YASUHIKO; KOKUBU YOSHIHIRO |
| 发表日期 | 1989-11-17 |
| 专利号 | JP1989286486A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve element characteristics by setting, when regrown layers are formed, a growing temperature of the regrown layers at a level layer than the growing temperature of a double-hetero junction and starting supply of a P-type dopant to the inside of a crystal growing furnace before initiating increase of the temperature. CONSTITUTION:On an N-type GaAs substrate 11, there are deposited by the MOCVD process an N-type GaAs buffer layer 12, an N-type GaAlP clad layer 13, an InGaP active layer 14, a P-type InGaAlP clad layer 15, a P-type InGaP cap layer 16 and N-type GaAs block layer 17 sequentially in that order. The block layer 17 is then provided with a groove. The substrate is disposed within a growing furnace. When growth is initiated, dimethyl zinc and PH3 have been already supplied to the growing furnace and a temperature within the furnace has been increased to a level higher than the growing temperature of a regrown layer. The growing temperature is first set at a level lower than the growing temperature of the double-hetero junction. When the temperature reaches the set level, supply of PH3 is changed over to supply of AsH3 so that a P-type GaAs contact layer 18 and a P type GaAs contact layer 19 are grown sequentially. Finally, electrodes 21 and 22 are adhered on the substrate and on the contact layer, respectively. |
| 公开日期 | 1989-11-17 |
| 申请日期 | 1988-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83876]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | NISHIKAWA YUKIE,TSUBURAI YASUHIKO,KOKUBU YOSHIHIRO. Manufacture of semiconductor laser. JP1989286486A. 1989-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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