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文献类型：专利
| 作者 | HAYAKAWA TOSHIRO; MYAUCHI NOBUYUKI |
| 发表日期 | 1986-06-12 |
| 专利号 | JP1986024840B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve the reliability and to suppress the noise characteristics of the titled laser element an also to enable to put the laser element into practical use by a method wherein, in regard to a Ga1-xAlxAs double hetero junction type semiconductor element, Mg is added to the active layer which oscillates a laser beam of visual range. CONSTITUTION:A P type clad layer 3 whereon Mg of 10cm was doped, a 5X10cmMg doped P type active layer 4, a 10cmTe doped N type clad layer 5 and a 10cmTe doped N type cap layer 6 are successively laminated using a continued liquid-phase epitaxial growing method. A current circuit 7, where a concentrated current runs, is provided at the V-shaped groove where a current limiting layer 2 was removed. A P side electrode 8 and an N side electrode 9 are formed by evaporation on a GaAs substrate 1 and the cap layer 6 respectively. As a layer 3 is formed thin on the area excluding the V-shaped groove and it is thickly formed at the V-shaped groove, the oscillating beam of light is oozed out to the layer 2 through the layer 3 on the part other than the V-shaped groove. Accordingly the lateral mode, for which practically effective refractive index difference is established in the lateral direction of the layer 4, can be stabilized. |
| 公开日期 | 1986-06-12 |
| 申请日期 | 1981-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83878]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIRO,MYAUCHI NOBUYUKI. -. JP1986024840B2. 1986-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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