Semiconductor laser device
文献类型：专利
| 作者 | RENNIE, JOHN; OKAJIMA, MASAKI; HATAKOSHI, GENICHI |
| 发表日期 | 1995-04-11 |
| 专利号 | US5406574 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer having a conductivity type different from that of the first cladding layer, wherein at least one of the first and second cladding layers has a multiquantum barrier structure. The width of the first quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 24 to 100 nm, the width of the second quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 5 to 20 nm, and the multiquantum barrier structure is constituted by alternately stacking first thin layers consisting of Inz(Ga1-xAlx)1-zP (x is 0.7 to 0 and z is 0 to 0) and second thin layers consisting of Inz(Ga1-yAly)1-zP (y is 0 to 0.3 and z is 0 to 0). |
| 公开日期 | 1995-04-11 |
| 申请日期 | 1993-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83880]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | RENNIE, JOHN,OKAJIMA, MASAKI,HATAKOSHI, GENICHI. Semiconductor laser device. US5406574. 1995-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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