Semiconductor light-emitting element
文献类型：专利
| 作者 | YAMAMOTO EIJI |
| 发表日期 | 1992-02-04 |
| 专利号 | JP1992032287A |
| 著作权人 | 光計測技術開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To control the oscillation wavelength of a semiconductor light-emitting element in such a manner as to be variable, widen the gain spectrum width and electrically control the spectrum shape by forming two active layers whose band gaps are different from each other in a waveguide structure by using a pnp or npn structure. CONSTITUTION:A p-type InP cladding layer 6 is provided as a second p-n structure which forms a pnp or npn structure with a first p-n structure with respect to an n-type separation layer 4. A second active layer 5-2 having a band gap energy smaller than that of the semiconductor layers on both sides thereof and a band gap different from that of a first active layer 5-1 is formed in the p-n junction of the second p-n structure. A part of a p-type layer 22, the first active layer 5-1, the separation layer 4, the active layer 5-2 and a cladding layer 6 constitute a mesa structure. This mesa structure is burried by a burring layer 7. |
| 公开日期 | 1992-02-04 |
| 申请日期 | 1990-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83887]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光計測技術開発株式会社 |
| 推荐引用方式 GB/T 7714 | YAMAMOTO EIJI. Semiconductor light-emitting element. JP1992032287A. 1992-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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