Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO; TAKAMIYA SABURO |
| 发表日期 | 1986-04-16 |
| 专利号 | JP1986074387A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the horizontally radiating pattern in a TJS laser unit by a method wherein a step is provided on the surface of a substrate and diffusion regions are formed on the surface in the under-the-step region for the enhanced absorption of scattered laser rays. CONSTITUTION:In a transverse junction stripe laser (TJS laser), a step 15 is formed on top of a substrate Over the step 15, a first clad layer 13 of the first conductivity type, activation layer 3, second clad layer 4 are formed. Lower on the substrate 1, diffusion regions 35, 16 are formed of the second conductivity type. These include the portions, in the under-the-step region 12, of the clad layers 4, 13, activation layer 3, and the substrate With the device constituted as such, scattered energy may be absorbed by the substrate 1 and diffusion regions 16, 35, which improves the geometry of the pattern radiating horizontally. |
| 公开日期 | 1986-04-16 |
| 申请日期 | 1984-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83888]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO,TAKAMIYA SABURO. Semiconductor laser. JP1986074387A. 1986-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。