半導体レ-ザ装置
文献类型：专利
| 作者 | 浜田 健; 伊藤 国雄 |
| 发表日期 | 1995-12-20 |
| 专利号 | JP1995120832B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To form a semiconductor laser having a flat active layer by a liquid phase epitaxial process even in a recessed part mounted on a substrate by forming a protrusion in the above recessed part and forming the active layer on the protrusion or near its protrusion. CONSTITUTION:A semi-insulating character having a plane (100) is formed by etching a recessed part that is 400 mum in width and 7 mum in depth in the direction of on a GaAs substrate After a growth of P-GaAs layer 2 had been carried out in the above recessed part, a mesa 2 mum in height and 15 mum in width is formed by performing an etching treatment. A growth of N-GaAs layer 3 is carried out on the above wafer so that a film thickness on the mesa comes to 1 mum. Accordingly the growth surface of the mesa comes to be flat and a parallel ridge 20 mum in width and 5 mum in height is formed to be spaced 5 mum away from the above wafer. Once double heterostructures of a laser consisting of the first clad layer 4, an active layer 5 as well as the second layer 6 are formed through a liquid phase epitaxial process on the wafer where the ridge is formed, the active layer on its groove land ridge comes to be flat. |
| 公开日期 | 1995-12-20 |
| 申请日期 | 1986-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83889]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 浜田 健,伊藤 国雄. 半導体レ-ザ装置. JP1995120832B2. 1995-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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