Semiconductor laser element and its manufacture
文献类型：专利
| 作者 | USHIKUBO TAKASHI; FURUKAWA RYOZO; KOBAYASHI NOBUO |
| 发表日期 | 1988-05-30 |
| 专利号 | JP1988126290A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and its manufacture |
| 英文摘要 | PURPOSE:To form a semiconductor laser element by one time of liquid growth, by forming a current constriction layer in the form of a hill wherein the thickness gradually and continuously increases in accordance with the distance further from the side of a current injection region and decreases after it reaches a maximum towards an active layer. CONSTITUTION:On the surface of a p-type GaAs substrate 31, a stripe type etching mask is formed, whose stripe is in the direction of , and, with etching liquid, a wafer is formed whose cross-section has an inverse mesa type protrusion 31a. After an n-type AlGaAs layer 51 for inner current constriction is grown on the wafer having the inverse mesa type protrusion 31a by a liquid phase epitaxial crystal growth process, a specified amount is eliminated from the top part of the protrusion 31a by melt-back. Then, a lower side clad layer 37, an active layer 39, an upper side clad layer 41 and a cap layer 43 are formed in order. |
| 公开日期 | 1988-05-30 |
| 申请日期 | 1986-11-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83901]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | USHIKUBO TAKASHI,FURUKAWA RYOZO,KOBAYASHI NOBUO. Semiconductor laser element and its manufacture. JP1988126290A. 1988-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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