Manufacture of optical semiconductor device
文献类型：专利
| 作者 | FUJII TAKUYA |
| 发表日期 | 1992-09-16 |
| 专利号 | JP1992260386A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical semiconductor device |
| 英文摘要 | PURPOSE:To form an optical waveguide layer having an excellent crystallinity and a multi-quantum well layer having an excellent crystallinity and steep hetero-interface. CONSTITUTION:This optical semiconductor device manufacturing method includes a process for growing an active layer having a multiplexed quantum well structure constituted by alternately forming mutli-quantum well layers 3a and barrier layers 3b on an optical waveguide layer 2 at the second temperature after the layer 2 is formed on a compound semiconductor substrate 1 at the first temperature and the temperature is lowered to the second temperature. The layer 2 and structure 3 are composed of III-IV compound semiconductors and the temperature drop from the first temperature to the second temperature is performed in an atmosphere which contains V group elements and does not substantially contain any III group element. |
| 公开日期 | 1992-09-16 |
| 申请日期 | 1991-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83903]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUJII TAKUYA. Manufacture of optical semiconductor device. JP1992260386A. 1992-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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