Semiconductor laser
文献类型：专利
| 作者 | TAKEUCHI YOSHINORI; OSHIMA MASAAKI |
| 发表日期 | 1988-07-07 |
| 专利号 | JP1988164388A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser, which conducts longitudinal single mode oscillation by low threshold currents and has excellent optical output- current characteristics and in which there is no turbulence of a transverse mode extending over a wide operating current range, by forming a trench being shaped to a semiconductor thin-film epitaxial-grown onto a semiconductor substrate and periodically meandering while keeping predetermined trench width, a clad layer formed into the trench and an active layer. CONSTITUTION:P-InP 2, n-InP 3 and n-InGaAsP 4 are grown by an epitaxial method onto an InP substrate An SiO2 thin-film is shaped onto the surface of n-InGaAsP 4, and a resist is applied. A meandering trench is formed through a photolithographic technique, and a meandering trench is also shaped to SiO2, using the trench as a mask. When a meandering period is brought to 3.8mum, twenty times as long as half a wavelength, in the case of a 3mum band laser employing InGaAsP as an active layer, a pattern can be shaped sufficiently through the photolithographic technique. Accordingly, an n-InP layer 6 as a clad layer, a p-InP layer 7 and an n-InGaAsP layer 8 as the active layer are buried and grown into the formed meandering trench 5. |
| 公开日期 | 1988-07-07 |
| 申请日期 | 1986-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83912]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKEUCHI YOSHINORI,OSHIMA MASAAKI. Semiconductor laser. JP1988164388A. 1988-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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