Manufacture of semiconductor laser device
文献类型：专利
| 作者 | YAMASHITA KOJI; OKADA MASATO; HIRONAKA MISAO |
| 发表日期 | 1990-08-10 |
| 专利号 | JP1990202085A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To protect the regrown interface against oxidation by a method wherein an etching stopper layer left at the etching of a current flow path groove is melted back, the surface of a clad layer at the groove is exposed when a cap layer is made to grow, and the cap layer and a contact layer are successively grown thereon. CONSTITUTION:An oxidation preventive GaAs layer 10 is left in thin film on the base of a current flow path 6 provided to a first conductivity type AlpGa1-pAs current block layer 11 which has been grown in a first epitaxial crystal growth process. When a second conductivity type AlzGa1-zAs cap layer 7 is grown without exposing a second conductivity type AlzGa1-zAs upper clad layer 4, only the oxidation preventive GaAs layer 10 is melted back to remove through a liquid phase epitaxial method. Thereafter, the second conductivity type AlzGa1-zAs cap layer 7 and a second conductivity type GaAs contact layer 8 are successively formed. By this setup, a regrown interface can be protected against oxidation. |
| 公开日期 | 1990-08-10 |
| 申请日期 | 1989-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83914]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAMASHITA KOJI,OKADA MASATO,HIRONAKA MISAO. Manufacture of semiconductor laser device. JP1990202085A. 1990-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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