Semiconductor light-emitting element
文献类型：专利
| 作者 | KONDO MASATO |
| 发表日期 | 1987-04-18 |
| 专利号 | JP1987084584A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To inhibit leakage currents from a buried layer, and to improve the performance of a buried type semiconductor laser by constituting a semiconductor light-emitting element provided with the buried layer consisting of three layers of InGaAs, InGaAsP, and InP having high resistance, with Fe being added, while said InGaAs, InGaAsP and InP are laminated in succession. CONSTITUTION:An Sn-added N-InP buffer layer 2, a non-added N-InGaAsP active layer 3, a Cd-added P-InP clad layer 4 and a Zn-added N-InGaAsP cap layer 5 are grown on an Sn-added (100) face N-InP substrate 1 through a liquid- phase epitaxial growth method in succession. An InGaAs layer 10 to which Fe is added at a growth-starting temperature of 650 deg.C is grown up to the side just under the InGaAsP active layer 3 as a first layer, and an N-InGaAsP anti- meltback layer 11 is grown in approximately 0.1mum as a second layer and an N-InP layer 12 until a mesa side-surface is buried as a third layer, thus forming a laser element. There are high resistance layers in a buried layer, thereby generating no increase of leakage currents even when the laser element is driven by high currents, thus inhibiting the deterioration in efficiency and an output. |
| 公开日期 | 1987-04-18 |
| 申请日期 | 1985-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83915]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASATO. Semiconductor light-emitting element. JP1987084584A. 1987-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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