Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | KIMURA SOICHI |
| 发表日期 | 1986-11-12 |
| 专利号 | JP1986255084A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To manufacture the semiconductor light-emitting device of long life and high reliability by growing a buffer layer of the opposite conductive type to that of a substrate and a cap layer of the opposite conductive type to that of the substrate in order by epitaxial growth and removing the substrate by etching. CONSTITUTION:After the first crystal growth, an oxide film is formed on a P-type InP cladding layer 4 and a stripe-form oxide film 12 is obtained selectively by photolithography. By using this oxide film 12 is obtained selectively by photolithography. By using this oxide film 12 as a mask, etching is done as far as an InP buffer layer 2, followed by the second crystal growth in which a P-type InP buried layer 5 and an N-type InP buried layer 6 are grown in order in the part produced by removal. Next, the oxide film 12 is removed and the third crystal growth is performed. Namely, a P-type InP buffer layer 7 of the opposite conductive type to that of the substrate 11 and a cap layer 8 of the opposite conductive type to that of the substrate 11 are grown in order over the entire surface of the cladding layer 4 and the buried layer 6. The substrate 11 is removed by etching using an InP selective etching solution. |
| 公开日期 | 1986-11-12 |
| 申请日期 | 1985-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83917]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIMURA SOICHI. Manufacture of semiconductor light emitting device. JP1986255084A. 1986-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。