Semiconductor light emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; NAKAJIMA KAZUO; AKITA KENZOU |
| 发表日期 | 1984-10-04 |
| 专利号 | JP1984175782A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To reduce the reactive current by providing a semiconductor clad layer, a semiconductor active layer and a semiconductor clad layer in a strip- form groove which penetrates through a plurality of AlInAs semiconductor layers and InP semiconductor layers arranged on an InP substrate. CONSTITUTION:On an N type InP substrate 11 in which (100) plane is a main plane, an N type InP layer 12, an AlInAs layer 13, and P type InP layer 14, an AlInAs layer 15 and a P type InP layer 16 are grown in the above order. Next, the groove 17 is formed in a direction of of the crystal by photolithography and chemical etching. The groove 17 is a V-shaped groove exposing (111)B plane. In the groove 17, an N type InP clad layer 18, an N type InGaAsP active layer 19, a P type clad layer 20 and a P type InGaAsP cap layer 21 are grown in the above order. At this time, an N type InP layer 18' and an N type InGaAsP layer 19' are grown on the layer 16 outside the groove 17. Subsequently, a protective insulating film 22 and electrodes 23 and 24 are formed. Thus the device in which the reactive current is reduced can be obtained. |
| 公开日期 | 1984-10-04 |
| 申请日期 | 1983-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83928]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,NAKAJIMA KAZUO,AKITA KENZOU. Semiconductor light emitting device. JP1984175782A. 1984-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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