Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | MOROFUJI TAKESHI; TAKEUCHI HIDEO |
| 发表日期 | 1990-03-26 |
| 专利号 | JP1990084786A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device, which has lowered reflectivity of the return beams of the end face of a laser chip and return beam noise of which are reduced, by roughening a beam-recovering region of a chip surface from which laser beams are extracted. CONSTITUTION:A beam-recovering region of a chip surface 21 from which laser beams are extracted is roughened. A compound semiconductor substrate 11, on a surface of which a growth layer 20 for laser beam emission is formed, is cloven, a protective film 22 is shaped onto both cloven surfaces 21 through one-time evaporation, said protective films 22 in regions, into which the return beams of the cleavage planes 21 from which laser beams are extracted are returned, are removed, and surfaces from which the protective films 22 are gotten rid are roughened. Al2O3 films are shaped on both sides of the cleavage planes 21 of a GaAlAs semiconductor laser as the protective films 22 of end faces, the growth layer 20 sides of cleavage planes are coated with resist films 23, and all Al2O3 films 22 exposed are etched by using an HF group etchant. The P-GaAs substrate 11 is dipped into the etchant of a KOH group, etc., and the surface is roughened. |
| 公开日期 | 1990-03-26 |
| 申请日期 | 1988-09-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83929]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MOROFUJI TAKESHI,TAKEUCHI HIDEO. Semiconductor laser device and manufacture thereof. JP1990084786A. 1990-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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