Semiconductor laser device
文献类型：专利
| 作者 | OTAKI KANAME |
| 发表日期 | 1989-11-15 |
| 专利号 | JP1989283890A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To determine the width of an active layer irrespective of a diffusion depth by providing an active region on a protrusion with the layer formed in a protrusion shape, and determining the width of the region by the width of the protrusion. CONSTITUTION:A protrusion is formed on an N-type GaAs substrate 1 by photocomposing and etching, and an N-type AlGaAs lower clad layer 2, an N-type GaAs active layer 3. an N-type AlGaAs upper clad layer 4, an N-type AlGaAs block layer 5, an N-type GaAs contact layer 6, and an N-type A/GaAs diffused regulating layer 11 are sequentially grown by crystal growth using organic metal, etc. Then, after an Si3N4 film 12 for a diffusion mask is formed thereon, a diffusing opening window 13 is formed by photocomposing and etching. Thereafter, after Zn is diffused in an arsenic atmosphere sealed in a quartz tube to form a Zn-diffused layer 7, the film 12 is removed. Thus, the width of the active region can be determined without depending upon diffusion. |
| 公开日期 | 1989-11-15 |
| 申请日期 | 1988-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83932]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTAKI KANAME. Semiconductor laser device. JP1989283890A. 1989-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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