Semiconductor laser device
文献类型：专利
| 作者 | MURAKAMI TAKASHI |
| 发表日期 | 1985-09-26 |
| 专利号 | JP1985189284A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To excellently maintain laser oscillation charactercteristics giving no adverse effect on a semiconductor layer by a method wherein, in the case of a striped interior type semiconductor laser device, a specific percentage of Al of solid phase composition is added to a GaAs current squeezing layer. CONSTITUTION:A common striped interior type semiconductor laser device is composed of a GaAs substrate 1, a GaAs current squeezing layer 2, a Ga1-xAlx As clad layer 3, a Ga1-yAlxAs active layer 4, a GaAs contact layer 5 and electrodes 6 and 7. According to this constitution, almost no terrace and wave are generated when a high density of Te is doped by adding 3-12% of Al to the GaAs current squeezing layer 2 in solid-state composition, a grown layer having very flat surface can be obtained, and a flat and uniform layer can be obtained even when the under side clad layer 3a, to be grown on the current squeezing layer 2, is thinned off, thereby enabling to accomplish the laser device having excellent characteristics. |
| 公开日期 | 1985-09-26 |
| 申请日期 | 1984-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83933]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MURAKAMI TAKASHI. Semiconductor laser device. JP1985189284A. 1985-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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