Semiconductor laser device
文献类型：专利
| 作者 | TANAKA TOSHIO; OTA YOICHIRO; NARA AIICHIRO |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169786A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device having a low operation current and less astigmatism by forming a current blocking layer on a substrate, forming a stripelike groove on the layer, and sequentially forming an optical guide layer, an active layer and a clad layer thereon. CONSTITUTION:A Zn-doped P-type AlGaAs clad layer 2, an N-type GaAs current blocking layer 3 and a P-type GaAs current blocking layer 4 are sequentially grown by an MOCVD method on a P-type GaAs substrate 1, and only the layers 3, 4 are formed with stripelike grooves. Then, an N-type AlGaAs layer 5, an N-type AlGaAs clad layer 8 and an N-type GaAs contact layer 9 are sequentially grown by an MOCVD method. In case of the second MOCVD method, Zn dopant in the layer 2 is diffused in the layer 5 to invert only the stripelike groove part to P-type to form a P-type AlGaAs optical guide layer 6. Thus, a current passage becomes only the stripelike groove, thereby eliminating a reactive current path to the other part. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83935]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,OTA YOICHIRO,NARA AIICHIRO. Semiconductor laser device. JP1988169786A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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