多波長半導体レーザ装置
文献类型：专利
| 作者 | 池田 外充 |
| 发表日期 | 1997-04-11 |
| 专利号 | JP2624310B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 多波長半導体レーザ装置 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which has such optical properties as astigmatism small in variability, a near field pattern, and others and enables the projection of two or more laser beams with different wavelengths which are excellent in stability by a method wherein two or more active stripe regions are arranged on the same substrate. CONSTITUTION:An active layer is composed of a light trapping layer 11, a well I layer 12, a barrier layer 13, a well II layer 14, and a light confining layer 15 deposited in this order to a substrate 1 side, and the oscillation wavelengths of the energy gaps of the wells I and II are 869nm and 808nm respectively. And, usually if a barrier is 100Angstrom or more in thickness, electron levels of wells are prevented from interferring with each other, so that the wells are made to oscillate independent of each other. The front of a laser, where an electrode 8 is provided, has a ridge type structure which constitutes an active region. The ridge type structure is formed in such a manner that a notch is provide up to the upside of an optical guide layer 4 through a partial selective etching after the layers have been laminated. At the rear of the active region, a diffracive grating is formed on the optical guide layer 4. The formation of the diffraction grating is made by changing the condition of a two light flux interference exposure method at the formation of resist. And, two or more energy levels different from each other in energy gap are formed in an active layer. |
| 公开日期 | 1997-06-25 |
| 申请日期 | 1988-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83949]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 池田 外充. 多波長半導体レーザ装置. JP2624310B2. 1997-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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