Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO |
| 发表日期 | 1991-11-18 |
| 专利号 | JP1991257984A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To get a refractive index guide type semiconductor laser having low threshold currents through one time or two time growth by growing a (AlxGa1-x)0.5In0.5P layer on the face different from a (100) face above or below a Ga0.5In0.5P active layer. CONSTITUTION:For the P-(Al0.5Ga0.5)0.5In0.5P clad layer grown on a diffraction grating 17, the forbidden band width becomes wider than that of the P-(Al0.5Ga0.5)0.5In0.5P clad layer 2b grown on a flat face 16 through one time growth, and a real refractive index guide is made in the transverse direction of a Ga0.5 In0.5P active layer 3, and the generated light is confined in the active region without being subjected to absorption. Moreover, the effect of the P-Ga0.5In0.5P buffer layer 7 inserted between the (100) P-GaAs substrate 1b and the P-(Al0.5Ga0.5)0.5In0.5P clad layer 2b lessens at a diffraction grating 17, so the resistance to the currents flowing in the Ga0.5In0.5P active region 3 increases, and leak currents decrease. Accordingly, the threshold current can be made small. |
| 公开日期 | 1991-11-18 |
| 申请日期 | 1990-03-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83952]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO. Semiconductor laser. JP1991257984A. 1991-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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